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Black phosphorus (BP) is one of the most concerned 2D (two-dimensional) layered materials in the application of nanoelectronic devices. Its unique properties include bandgap energy varying with the number of layers, The reduction can vary from 0.3 eV (bulk) to 2.0 eV (monolayer). In general, 2D layered materials including BP have some limitations in terms of synthesis due to process factors such as time and temperature. BP is extremely unstable in air, and therefore, from 2D materials to bulk materials The processing, the need to use a certain thinning technology to control the thinning of the thickness.
According to the firm's consultation, researchers such as Jin Woo Park at Advanced Materials Science and Engineering at Sungkyunkwan University in Korea used an Ar + (ionized) ion beam control scheme to control BP depletion Thin research. By using an Ar + ion beam with a near monomolecular energy of 45 48 eV, BP can be thinned to a bilayer BP at about 0.55 nm / min without causing surface roughness or altering the surface's chemical bonding state. At the same time, the Ar + ion beam can also remove the BP oxide from the feedstock BP. 2D BP field-effect transistors (FETs) made with thinned double-layer to 10-layer BP show similar electrical properties as those of the original BP field-effect transistors. The experimental results show that the single ion energy Ar + ion beam thinning process does not damage the electrical properties of 2D layered BP material.
The research results are published in "Journal of Materials Chemistry C" published October 16, 2017.
Advanced LKJ series ion beam etching system researched and developed by Beijing Edvard Ion Beam Research Institute Co., Ltd. is a universal ion beam etching system which can not only perform the traditional micro / nano structure etching but also realize ion beam cleaning, Material surface polishing and material thinning functions, but also chemical-assisted ion beam etching (CAIBE) and reactive ion beam etching (RIBE).
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